|  |
| |
| Artikel-Nr.:
5667A-9783319011646 Herst.-Nr.:
9783319011646 EAN/GTIN:
9783319011646 |
| |
|
| | |
| This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. Weitere Informationen: | | Author: | Viranjay M. Srivastava; Ghanshyam Singh | Verlag: | Springer International Publishing | Sprache: | eng |
|
| | |
| | | |
| Weitere Suchbegriffe: allgemeine Technikbücher, allgemeine Technikbücher - englischsprachig, allgemeine technikbücher - englischsprachig, Analog/RF IC Design; CMOS Radio-frequency Integrated Circuits; CSDG MOSFET; DP4T RF Switch; Double-Gate MOSFET; Double-Pole Four-Throw RF Switch; HFO2 Based Double-Gate MOSFET, Analog/RF IC Design, CMOS Radio-Frequency Integrated Circuits, CSDG MOSFET, DP4T RF Switch, Double-Gate MOSFET, Double-Pole Four-Throw RF Switch, HFO2 Based Double-Gate MOSFET |
| | |
| |