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| Artikel-Nr.:
822EL-2296447 Herst.-Nr.:
NTBLS1D7N08H EAN/GTIN:
k.A. |
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| Channel-Typ = N
Dauer-Drainstrom max. = 203 A
Drain-Source-Spannung max. = 80 V
Gehäusegröße = M0-299A
Montage-Typ = SMD
Pinanzahl = 8
Drain-Source-Widerstand max. = 0,0017 Ω
Gate-Schwellenspannung max. = 4V
Anzahl der Elemente pro Chip = 1
The ON Semiconductor N-channel power MOSFET has low on state resistance and low gate charge. It has 203 A of drain current. It is used in power tools, battery operated vacuums, UAV/drones, material handling, BMS/storage and home automation.Minimize conduction losses Minimize driver losses Lowers switching noise/EMI Weitere Informationen: | | Channel-Typ: | N | Dauer-Drainstrom max.: | 203 A | Drain-Source-Spannung max.: | 80 V | Gehäusegröße: | M0-299A | Montage-Typ: | SMD | Pinanzahl: | 8 | Drain-Source-Widerstand max.: | 0,0017 O | Gate-Schwellenspannung max.: | 4V | Anzahl der Elemente pro Chip: | 1 |
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| Weitere Suchbegriffe: 2296447, Halbleiter, Diskrete Halbleiter, onsemi, NTBLS1D7N08H, Semiconductors, Discrete Semiconductors, MOSFETs |
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